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The PTFB241402F-V1-R250 is a silicon RF power MOSFET transistor designed for broadband applications. It operates within the 2320 MHz to 2380 MHz frequency range, delivering an output power of 56 dBm (400 W) at the 1 dB compression point. The device features a typical small-signal gain of 17 dB and an efficiency of 60% under continuous wave conditions with a drain voltage of 30 V and quiescent current of 660 mA. Packaged in the H-37248 screw-mount configuration, it supports high-power amplification.
Verify the specific suffix R250 against the manufacturer's latest documentation to confirm reel quantity and packaging specifications. Ensure the component meets RoHS compliance requirements relevant to your manufacturing process. Confirm that the H-37248 mounting interface matches your mechanical design constraints before finalizing orders.
Select this component for designs requiring high linearity and power efficiency in the L-band spectrum. Evaluate the thermal resistance of the H-37248 package to ensure adequate heat dissipation for continuous operation. Consider the 30 V supply requirement when designing the bias network and power delivery infrastructure.
This part belongs to MACOM's portfolio of silicon RF power MOSFETs engineered for demanding wireless infrastructure environments. These transistors are optimized to provide reliable performance in high-volume production scenarios where signal integrity and power handling are critical for system stability.
Consult official cross-reference tools for parametrically similar parts. Verify pinout compatibility and thermal characteristics if substituting.