PTFC210202FC-V1-R0

PTFC210202FC-V1-R0

$67.37
  • Description:RF MOSFET LDMOS 28V H-37248-4
  • Series:-

SKU:179cdf42d4e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-37248-4
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Strip
  • Technology:LDMOS
  • Frequency:2.2GHz
  • Gain:21dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:170 mA
  • Power - Output:5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-37248-4
  • Supplier Device Package:H-37248-4
  • Configuration:Dual

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PTFC210202FC-V1-R0

Overview

The PTFC210202FC-V1-R0 is a dual N-channel RF LDMOS FET designed for high-power applications. It operates within the 2.2 GHz frequency range, delivering 5 W of output power with 21 dB gain. The device features a 28 V drain-source breakdown voltage and requires a +10 V gate-source voltage. Packaged in the H-37248-4 form factor, it supports surface mount installation and functions at temperatures up to +225°C.

Feature Summary

  • Dual N-channel LDMOS architecture for balanced signal processing
  • Optimized for high efficiency at 2.2 GHz operational frequencies
  • Robust thermal management capabilities supporting extreme operating temperatures

Applications

  • Wireless infrastructure base station amplifiers
  • Industrial radio frequency heating systems
  • Defense communication equipment transmitters

Procurement Notes

Verify component authenticity through authorized MACOM distributors or certified partners. Confirm package integrity upon receipt, as the H-37248-4 housing is sensitive to mechanical stress. Cross-reference datasheet revisions to ensure compatibility with existing circuit designs. Request batch-specific test reports for critical performance validation before integration into final assemblies.

Selection Notes

Select this component when designing circuits requiring moderate power output at 2.2 GHz. Ensure the power supply provides stable 28 V drainage and precise +10 V gating. Verify that the PCB layout accommodates the H-37248-4 footprint. Consider thermal dissipation requirements given the high junction temperature tolerance. Evaluate impedance matching networks to maximize the specified 21 dB gain performance.

Part Context

This part belongs to MACOM's PTFC series of RF MOSFET transistors. These devices utilize Silicon technology for reliable high-frequency operation. The series targets telecommunications and industrial sectors requiring robust semiconductor solutions. The specific model represents a dual-channel configuration optimized for linear amplification tasks.

Replacement Considerations

Consult official MACOM documentation for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative models. Ensure replacement components match the H-37248-4 package dimensions.

PTFC210202FC-V1-R0PTFC210202FC-V1-R0
$67.37
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