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The PTFC210202FC-V1-R0 is a dual N-channel RF LDMOS FET designed for high-power applications. It operates within the 2.2 GHz frequency range, delivering 5 W of output power with 21 dB gain. The device features a 28 V drain-source breakdown voltage and requires a +10 V gate-source voltage. Packaged in the H-37248-4 form factor, it supports surface mount installation and functions at temperatures up to +225°C.
Verify component authenticity through authorized MACOM distributors or certified partners. Confirm package integrity upon receipt, as the H-37248-4 housing is sensitive to mechanical stress. Cross-reference datasheet revisions to ensure compatibility with existing circuit designs. Request batch-specific test reports for critical performance validation before integration into final assemblies.
Select this component when designing circuits requiring moderate power output at 2.2 GHz. Ensure the power supply provides stable 28 V drainage and precise +10 V gating. Verify that the PCB layout accommodates the H-37248-4 footprint. Consider thermal dissipation requirements given the high junction temperature tolerance. Evaluate impedance matching networks to maximize the specified 21 dB gain performance.
This part belongs to MACOM's PTFC series of RF MOSFET transistors. These devices utilize Silicon technology for reliable high-frequency operation. The series targets telecommunications and industrial sectors requiring robust semiconductor solutions. The specific model represents a dual-channel configuration optimized for linear amplification tasks.
Consult official MACOM documentation for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative models. Ensure replacement components match the H-37248-4 package dimensions.