PTFC260202FC-V1

PTFC260202FC-V1

  • Description:RF MOSFET LDMOS 28V H-37248-4
  • Series:-

SKU:23d9f7c16c8c Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-37248-4
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.69GHz
  • Gain:20dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:170 mA
  • Power - Output:5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-37248-4
  • Supplier Device Package:H-37248-4
  • Configuration:Dual

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PTFC260202FC-V1

Overview

The PTFC260202FC-V1 is a dual N-channel RF MOSFET transistor manufactured by MACOM Technology Solutions. Constructed using silicon technology, this component operates within the frequency range of 2.495 GHz to 2.69 GHz. It features a drain-source breakdown voltage (Vds) of 65 V and a maximum gate-source voltage (Vgs) of +10 V. The device provides a typical gain of 20 dB with an output power capability of 25 W. Its drain-source on-resistance (Rds On) is specified at 50 mOhms. Designed for surface mount installation, it utilizes the H-37248-4 package and supports a maximum operating temperature of +225 C.

Feature Summary

  • Dual N-channel configuration for balanced RF signal processing
  • Silicon-based LDMOS construction for high thermal stability
  • Surface-mount design optimized for compact PCB integration

Applications

  • Wireless communication infrastructure amplification
  • Broadband RF signal generation circuits
  • Microwave transmitter modules

Procurement Notes

Verify the complete part number including suffixes against official MACOM documentation to ensure correct package and electrical specifications. Confirm RoHS compliance status through current datasheets. Check for factory special order requirements as availability may vary. Validate that the H-37248-4 package matches your board layout constraints before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring dual-channel operation in the 2.5 GHz to 2.7 GHz band. Ensure the system can handle the 65 V breakdown voltage and +10 V gate drive limits. Consider the 50 mOhm on-resistance for efficiency calculations. Verify thermal management capabilities support the +225 C maximum junction temperature rating during continuous operation.

Part Context

This RF MOSFET belongs to MACOM's portfolio of silicon-based radio frequency transistors. It serves as a discrete active element for power amplification stages. The dual-channel architecture allows for push-pull or differential circuit configurations. It complements other MACOM RF components in wireless infrastructure systems.

Replacement Considerations

Consult MACOM engineering for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully. Ensure any replacement maintains compatibility with the H-37248-4 package footprint and meets the same frequency and power requirements.

PTFC260202FC-V1PTFC260202FC-V1

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