SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTFC260202FC-V1 is a dual N-channel RF MOSFET transistor manufactured by MACOM Technology Solutions. Constructed using silicon technology, this component operates within the frequency range of 2.495 GHz to 2.69 GHz. It features a drain-source breakdown voltage (Vds) of 65 V and a maximum gate-source voltage (Vgs) of +10 V. The device provides a typical gain of 20 dB with an output power capability of 25 W. Its drain-source on-resistance (Rds On) is specified at 50 mOhms. Designed for surface mount installation, it utilizes the H-37248-4 package and supports a maximum operating temperature of +225 C.
Verify the complete part number including suffixes against official MACOM documentation to ensure correct package and electrical specifications. Confirm RoHS compliance status through current datasheets. Check for factory special order requirements as availability may vary. Validate that the H-37248-4 package matches your board layout constraints before finalizing procurement decisions.
Select this component when designing circuits requiring dual-channel operation in the 2.5 GHz to 2.7 GHz band. Ensure the system can handle the 65 V breakdown voltage and +10 V gate drive limits. Consider the 50 mOhm on-resistance for efficiency calculations. Verify thermal management capabilities support the +225 C maximum junction temperature rating during continuous operation.
This RF MOSFET belongs to MACOM's portfolio of silicon-based radio frequency transistors. It serves as a discrete active element for power amplification stages. The dual-channel architecture allows for push-pull or differential circuit configurations. It complements other MACOM RF components in wireless infrastructure systems.
Consult MACOM engineering for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully. Ensure any replacement maintains compatibility with the H-37248-4 package footprint and meets the same frequency and power requirements.