PTFC261402FC-V1-R250

PTFC261402FC-V1-R250

$73.24
  • Description:RF MOSFET LDMOS 28V
  • Series:-

SKU:9f82c478b5d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.69GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:28W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

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PTFC261402FC-V1-R250

Overview

The PTFC261402FC-V1-R250 is a dual N-channel RF LDMOS FET manufactured by MACOM. It operates within the frequency range of 2.62 GHz to 2.69 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V, a maximum gate-source voltage (Vgs) of +10 V, and a typical on-resistance (Rds(on)) of 100 mOhms. The device delivers an output power of 140 W with a gain of 18 dB. It supports a maximum operating temperature of +225°C and utilizes an H-37248-4 package for surface mount installation.

Feature Summary

  • Dual N-channel configuration utilizing Silicon LDMOS technology
  • High thermal stability supporting operation up to +225°C
  • Designed for high-power RF applications in the 2.62–2.69 GHz band

Applications

  • RF power amplification in wireless communication infrastructure
  • Base station transmitter modules
  • Industrial, Scientific, and Medical (ISM) equipment requiring high-frequency RF power

Procurement Notes

Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet. Validate that the specific suffix matches design requirements, as variations may exist within the product family.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 2.6 GHz band. Evaluate thermal management solutions to handle the 140 W output power dissipation effectively. Ensure the driving circuitry can provide the necessary +10 V gate drive signal. Compare against alternative LDMOS devices if lower power or different frequency ranges are acceptable.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding wireless applications. It complements other high-power LDMOS devices used in cellular base stations and broadband infrastructure. The H-37248-4 package facilitates integration into compact RF modules while maintaining robust thermal performance for continuous wave operations.

PTFC261402FC-V1-R250PTFC261402FC-V1-R250
$73.24
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