PTNC210604MD-V2-R5

Overview

The PTNC210604MD-V2-R5 is a Radio Frequency Metal Oxide Semiconductor Field Effect Transistor (RF MOSFET) manufactured by MACOM Technology Solutions. This component operates within the 2110-2200 MHz frequency range and utilizes Silicon technology. It integrates a two-stage LDMOS RFIC to function as an amplifier. The device is designed for high-frequency signal processing applications requiring robust RF performance.

Feature Summary

• Integrates a two-stage LDMOS RFIC architecture
• Designed for radio frequency amplification
• Utilizes silicon-based semiconductor technology

Applications

• Radio frequency signal amplification
• Wireless communication infrastructure
• Broadband transmission systems

Procurement Notes

Verify current availability status directly with the manufacturer or authorized distributors, as supply conditions may vary. Confirm that the specific suffix matches the required packaging configuration. Ensure compatibility with existing circuit designs before finalizing procurement orders.

Selection Notes

Select this component for applications requiring operation in the 2110-2200 MHz band. Consider the integrated two-stage LDMOS design for simplified circuit implementation. Evaluate thermal management requirements based on the specific power dissipation characteristics of the silicon RF MOSFET structure.

Part Context

This part belongs to the MACOM portfolio of RF MOSFET transistors. These components are engineered for high-performance analog and microwave applications. The product line focuses on providing reliable solutions for wireless communications and broadband networks through advanced semiconductor integration.

Replacement Considerations

Consult official cross-reference tools or manufacturer documentation to identify parametrically similar parts. Verify that any substitute component matches the operating frequency range and package specifications.