PTRA087008NB-V1-R2

Overview

The PTRA087008NB-V1-R2 is a high-power RF LDMOS FET rated at 650 W output power with a 48 V supply voltage. It operates within the 755 MHz to 805 MHz frequency band and is manufactured using Wolfspeed advanced LDMOS technology. The device features broadband internal input and output matching, an asymmetric design with a main P1dB of 245 W typical and peak P1dB of 380 W typical, and integrated ESD protection. In Doherty configurations at 805 MHz, it delivers 650 W output at P3dB with 52% efficiency and 19.5 dB gain.

Feature Summary

• Broadband internal input and output matching for simplified circuit integration
• Asymmetric design capability supporting high peak power operation
• Integrated electrostatic discharge (ESD) protection mechanisms
• Advanced thermal performance and reliability via specialized LDMOS fabrication

Applications

• Multi-standard cellular power amplifier applications
• Doherty configuration power amplifiers in the 755-805 MHz band

Procurement Notes

Verify the specific suffix -R2 against official MACOM documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the part number matches the exact revision required for your assembly process. Cross-reference with the latest datasheet to confirm RoHS compliance status and any recent product change notifications that may affect pinout or electrical characteristics prior to final procurement.

Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and power density in the 755-805 MHz range. The asymmetric design suits applications demanding high peak-to-average power ratios. Evaluate thermal management requirements carefully due to the 650 W power rating. Confirm compatibility with 48 V supply rails and verify that the internal matching network aligns with the target system impedance without external tuning components.

Part Context

This device belongs to the MACOM PTRA series of high-power RF LDMOS field-effect transistors. These components are engineered for base station power amplification, leveraging Wolfspeed's proprietary semiconductor processes. The series emphasizes robustness under high voltage stress and high VSWR conditions, making it suitable for demanding wireless communication environments where reliability and thermal stability are critical operational parameters.

Replacement Considerations

Consult official MACOM cross-reference guides for verified substitutes. No public substitute part numbers are confirmed in available documentation.