PTRA095908NB-V1-R2

$91.38

Description：RF MOSFET LDMOS 6HB2SOF
Series：-

SKU:d37fb24ce3b1 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 6HB2SOF
Series：-
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：925MHz ~ 960MHz
Gain：17.5dB
Voltage - Test：-
Current Rating (Amps)：-
Noise Figure：-
Current - Test：-
Power - Output：-
Voltage - Rated：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：HB2SOF-6-1
Supplier Device Package：PG-HB2SOF-6-1
Configuration：-

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PTRA095908NB-V1-R2

Overview

The PTRA095908NB-V1-R2 is an RF MOSFET LDMOS transistor manufactured by MACOM Technology Solutions. It utilizes a 6HB2SOF package and operates within the radio frequency spectrum. The device features broadband internal input and output matching capabilities, supporting asymmetric Doherty amplifier designs. Key performance metrics include a typical P1dB of 250 W for the main path and 400 W for the peak path. This component is designed for high-power RF applications requiring robust linearity and efficiency.

Feature Summary

Broadband internal input and output matching
Asymmetric Doherty design architecture
High power linear operation

Applications

Base station power amplifiers
Wireless infrastructure systems
Doherty amplifier modules

Procurement Notes

Verify the specific suffix V1 against the manufacturer's latest datasheet to ensure compatibility with current assembly sites and process technologies. Confirm RoHS3 compliance status and MSL rating prior to integration into production lines. Cross-reference the part number with official PCN documents to validate any recent manufacturing site additions or material changes.

Selection Notes

Select this component for applications requiring high output power in asymmetric Doherty configurations. Ensure the system design supports the required biasing conditions for both main and peak paths. Verify that the thermal management solution accommodates the power dissipation characteristics inherent to LDMOS technology in the specified package.

Part Context

This part belongs to MACOM's portfolio of RF power transistors designed for telecommunications infrastructure. It leverages advanced GaN or mHEMT process technologies often showcased at industry events like European Microwave Week. The product is intended for high-performance signal generation in modern wireless networks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives or newer revisions.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.