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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V H-36265-2
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：390MHz ~ 450MHz
- Gain：25dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：50 mA
- Power - Output：12W
- Voltage - Rated：105 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：H-36265-2
- Supplier Device Package：H-36265-2
- Configuration：-
Download product information
Overview
The PTVA030121EA-V1-R0 is a 50V RF LDMOS power transistor manufactured by MACOM Technology Solutions. It operates within the 390MHz to 450MHz frequency range and is characterized for use in power amplifier applications. The device features high gain, making it suitable for demanding RF environments. It is available in a bolt-down package configuration designated as H-36265-2, with specific reel options including 50pcs tape and reel packaging.
Feature Summary
- High gain performance optimized for RF power amplification
- LDMOS technology construction for robust operation
- Designed specifically for power amplifier applications
Applications
- Power amplifier modules in the 390 MHz to 450 MHz band
- RF communication systems requiring high gain transistors
- Broadband RF infrastructure components
Procurement Notes
Verify the specific suffix (R0) against official MACOM documentation to confirm the exact reel quantity and packaging variant. Ensure the H-36265-2 bolt-down package footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's current product compliance declarations before finalizing procurement orders.
Selection Notes
Select this component when designing amplifiers for the 390-450 MHz spectrum requiring LDMOS reliability. Evaluate thermal management requirements due to the bolt-down package style. Compare gain specifications against alternative RF MOSFETs to ensure compatibility with system noise figure and linearity targets.
Part Context
This part belongs to MACOM's portfolio of RF MOSFET transistors utilizing Silicon technology. It serves as a discrete active component for analog signal processing in wireless and RF integrated circuits. The device supports high-speed connectivity solutions by providing necessary power amplification stages in RF front-end designs.
Replacement Considerations
Consult official MACOM substitution guides for direct equivalents. Verify pinout compatibility and thermal resistance values if considering cross-brand alternatives. No public confirmed substitute part numbers are identified in available documentation.
