PTVA042502FC-V1-R0

Overview

The PTVA042502FC-V1-R0 is a dual N-channel RF LDMOS FET transistor manufactured by MACOM Technology Solutions. It operates within the 470 MHz to 806 MHz frequency band, specifically optimized for power amplifier applications in this range. The device features a drain-source breakdown voltage of 105V and a maximum operating temperature of +225°C. It utilizes an H-37248H-4 surface mount package configuration.

Feature Summary

• Dual N-channel RF LDMOS architecture
• Optimized for 470 MHz to 806 MHz power amplification
• High thermal stability with +225°C max operating temperature

Applications

• Power amplifier modules in the 470-806 MHz band
• Broadband RF transmission systems
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with MACOM or authorized distributors. Confirm that the H-37248H-4 package dimensions match your PCB footprint requirements. Ensure thermal management solutions support the high junction temperature capabilities specified for this component type.

Selection Notes

Select this component when designing amplifiers for the 470-806 MHz spectrum requiring robust LDMOS performance. Consider the 105V rating for appropriate biasing networks. Evaluate the dual-channel configuration for balanced push-pull or differential circuit topologies suitable for broadband RF applications.

Part Context

This part belongs to MACOM's PTVA series of transistors designed for high-performance RF applications. The FC variant indicates specific packaging and testing configurations. These components are integral to MACOM's portfolio of semiconductor solutions for telecommunications and industrial sectors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support for direct replacements or pin-compatible alternatives.