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PTVA093002ND-V1-R5 is an RF power field-effect transistor manufactured by MACOM Technology Solutions. It is a 2-element device designed for the Ultra High Frequency (UHF) band. The component utilizes LDMOS technology and operates with a maximum drain voltage of 48V. It is housed in a compact HBSOF-4-1 surface-mount package, suitable for high-frequency applications requiring robust power handling capabilities.
Verify the specific suffix 'V1' against the manufacturer's official documentation to confirm the exact pinout configuration and electrical characteristics. Ensure that the HBSOF-4-1 package dimensions align with the target PCB layout requirements before finalizing procurement decisions.
Select this component when designing circuits for the Ultra High Frequency band that require dual-element performance. Consider the 48V operating limit and the specific thermal requirements associated with the HBSOF-4-1 package during the initial design phase.
This part belongs to the PTVA series of RF power FETs from MACOM Technology Solutions. These devices are engineered for high-performance radio frequency applications, providing reliable operation in demanding UHF environments within a compact form factor.
Consult the official MACOM datasheet for confirmed substitute part numbers. Do not assume cross-compatibility with other LDMOS transistors without verifying matching electrical parameters and physical footprint constraints.