PTVA093002TCV1R250XUMA1

Description：RF MOSFET LDMOS 50V H-49248H-4
Series：-

SKU:29dd6f1ce8ff Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V H-49248H-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：730MHz ~ 960MHz
Gain：18.5dB
Voltage - Test：50 V
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：400 mA
Power - Output：300W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：H-37248G-4/2
Supplier Device Package：H-49248H-4
Configuration：Dual, Common Source

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PTVA093002TCV1R250XUMA1

Overview

The PTVA093002TC is a 300-watt LDMOS FET designed for multi-standard cellular power amplifier applications. It operates within the 703–960 MHz frequency range and supports 50 V drain voltage. The device features dual-path design, integrated input matching, and an H-49248H-4 thermally-enhanced surface-mount package with formed leads. It provides excellent thermal performance and superior reliability, manufactured using Infineon's advanced LDMOS process.

Feature Summary

Dual-path architecture with integrated input matching
Thermally-enhanced surface-mount packaging
Integrated ESD protection compliant with Human Body Model class 2
Capable of withstanding 10:1 load mismatch at specified output power

Applications

Multi-standard cellular power amplifiers
Single-ended RF amplifier configurations
Doherty amplifier configurations

Procurement Notes

Verify the specific ordering suffix to confirm shipping format. The part number PTVA093002TCV1R250XUMA1 corresponds to the Tape & Reel variant containing 250 pieces per reel. Ensure compatibility with the H-49248H-4 package dimensions during PCB layout. Confirm RoHS compliance status if required by local regulations.

Selection Notes

Select this component for high-power RF applications requiring operation between 703 and 960 MHz. The device supports both single-ended and Doherty topologies. Consider the low thermal resistance for heat dissipation requirements. Verify that the system can handle the maximum junction temperature of 200 °C and the specified gate-source voltage limits.

Part Context

This component belongs to Infineon's portfolio of thermally-enhanced high-power RF LDMOS FETs. These devices are engineered for robust performance in demanding wireless infrastructure environments. The technology leverages advanced manufacturing processes to deliver high efficiency and reliability in compact surface-mount packages suitable for modern base station designs.

Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure replacement parts match the H-49248H-4 package outline and pin configuration. Verify that alternative components meet the same frequency range, power output, and thermal resistance specifications.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.