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— IC芯片 | 连接器 | 传感器 | 被动器件 —
PTVA101K02EV-V1-R250 is a thermally-enhanced high-power RF LDMOS FET manufactured by Infineon. It operates within the frequency range of 1030 MHz to 1090 MHz, delivering an output power of 1000 W at a drain voltage of 50 V.
Verify the manufacturer designation carefully, as the part number appears in databases associated with both PulseLarsen Antennas and Infineon Technologies. Confirm the specific datasheet version and electrical characteristics match your design requirements before procurement, as discrepancies exist between listed descriptions.
Select this component for applications requiring high output power in the 1030-1090 MHz range. Ensure thermal management solutions are adequate for the 1000 W output capability. Verify compatibility with 50 V supply rails and impedance matching networks designed for UHF frequencies.
This device belongs to the category of high-power RF semiconductor components used in infrastructure and industrial systems. It serves as a critical active element in linear power amplification stages where high linearity and efficiency are required for signal integrity.