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The PTVA101K02EVV1XWSA1 is a thermally-enhanced high-power RF LDMOS FET designed for power amplifier applications in the 1030 MHz and 1090 MHz frequency bands. It delivers up to 1000 W output power with a 50 V drain supply. The device features broadband input matching, high gain, and integrated ESD protection. Manufactured using Infineon's advanced LDMOS process, it offers excellent thermal performance and superior reliability within its bolt-down flange package.
Verify the specific ordering code PTVA101K02EVV1XWSA1 against official Infineon documentation to confirm the H-36275-4 bolt-down tray packaging configuration. Ensure compatibility with the required test fixtures for accurate performance validation during integration.
Select this component for high-power RF applications requiring operation at 1030 MHz or 1090 MHz. Consider the 50 V drain voltage requirement and the necessity for a bolt-down mounting solution to manage thermal dissipation effectively under high load conditions.
This part belongs to the PTVA101K02EV series of thermally-enhanced high-power RF LDMOS FETs. It is manufactured by Infineon Technologies and utilizes their advanced LDMOS process technology to ensure robust performance and reliability in demanding radio frequency power amplifier environments.
PTVA101K02EVV1R250XTMA1 is a confirmed substitute offering identical electrical characteristics but supplied in tape and reel packaging instead of trays.