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The PTVA102001EA-V1-R0 is a thermally-enhanced high power RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for power amplifier applications, it operates within the 960 to 1600 MHz frequency band and delivers 200 W of output power at a 50 V drain voltage. The device features an input-matched architecture, integrated ESD protection, and low thermal resistance. It utilizes the H-36265-2 bolt-down package and is supplied in tape and reel packaging containing 50 pieces per unit.
Verify the specific ordering suffix R0 against the datasheet to confirm the 50-piece tape and reel shipping format. Ensure compatibility with the H-36265-2 bolt-down package dimensions during mechanical integration. Confirm that the component meets Pb-free and RoHS compliance requirements for your manufacturing process.
Select this component when designing amplifiers requiring 200 W output power between 960 MHz and 1600 MHz. Consider its 50 V operating voltage and Class AB biasing characteristics. Evaluate the H-36265-2 package for thermal management needs and verify that the 10:1 VSWR capability aligns with system impedance stability requirements.
This part belongs to MACOM's portfolio of thermally-enhanced high power RF LDMOS FETs. These devices are engineered for superior reliability and excellent thermal performance using an advanced LDMOS process. They are intended for robust power amplifier applications where high gain and efficient operation are critical.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum junction temperature (TJ) is rated at 225 °C.
Yes, the PTVA102001EA features an input matched configuration.
The typical gain is 18.5 dB at 1090 MHz with a 300 µs pulse width and 10% duty cycle.