PTVA102001EA-V1-R0

PTVA102001EA-V1-R0

$168.90
  • Description:RF MOSFET LDMOS 50V H-36265-2
  • Series:-

SKU:f10d2ad246d6 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V H-36265-2
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:960MHz ~ 1.6GHz
  • Gain:18.5dB
  • Voltage - Test:50 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:200W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36265-2
  • Supplier Device Package:H-36265-2
  • Configuration:-

Download product information

PTVA102001EA-V1-R0

Overview

The PTVA102001EA-V1-R0 is a thermally-enhanced high power RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for power amplifier applications, it operates within the 960 to 1600 MHz frequency band and delivers 200 W of output power at a 50 V drain voltage. The device features an input-matched architecture, integrated ESD protection, and low thermal resistance. It utilizes the H-36265-2 bolt-down package and is supplied in tape and reel packaging containing 50 pieces per unit.

Feature Summary

  • Input matched configuration simplifies circuit design
  • Capable of handling 10:1 VSWR at maximum rated output power
  • Integrated electrostatic discharge (ESD) protection
  • Low thermal resistance with bolt-down flange

Applications

  • Power amplifier applications in the 960 to 1600 MHz frequency band

Procurement Notes

Verify the specific ordering suffix R0 against the datasheet to confirm the 50-piece tape and reel shipping format. Ensure compatibility with the H-36265-2 bolt-down package dimensions during mechanical integration. Confirm that the component meets Pb-free and RoHS compliance requirements for your manufacturing process.

Selection Notes

Select this component when designing amplifiers requiring 200 W output power between 960 MHz and 1600 MHz. Consider its 50 V operating voltage and Class AB biasing characteristics. Evaluate the H-36265-2 package for thermal management needs and verify that the 10:1 VSWR capability aligns with system impedance stability requirements.

Part Context

This part belongs to MACOM's portfolio of thermally-enhanced high power RF LDMOS FETs. These devices are engineered for superior reliability and excellent thermal performance using an advanced LDMOS process. They are intended for robust power amplifier applications where high gain and efficient operation are critical.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (TJ) is rated at 225 °C.

Does the device include input matching?

Yes, the PTVA102001EA features an input matched configuration.

What is the typical gain at 1090 MHz under pulsed conditions?

The typical gain is 18.5 dB at 1090 MHz with a 300 µs pulse width and 10% duty cycle.

PTVA102001EA-V1-R0PTVA102001EA-V1-R0
$168.90
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