PTVA104501EHV1XWSA1

Description：RF MOSFET LDMOS H-33288-2
Series：-

SKU:221ec28674c8 Category: RF FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS H-33288-2
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：LDMOS
Frequency：960MHz ~ 1.215GHz
Gain：-
Voltage - Test：-
Current Rating (Amps)：-
Noise Figure：-
Current - Test：-
Power - Output：-
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：H-33288-2
Supplier Device Package：H-33288-2
Configuration：Dual

Download product information

PTVA104501EHV1XWSA1

Overview

The PTVA104501EHV1XWSA1 is a radio frequency lateral double-diffused metal-oxide semiconductor field-effect transistor manufactured by Infineon Technologies. It operates within the 960 MHz to 1215 MHz frequency range and utilizes silicon technology. The device features an H-33288-2 surface-mount package designed for high-power RF applications. Key electrical specifications include a drain-source breakdown voltage of 105 V, a maximum on-resistance of 100 mΩ, and a gate-source voltage rating of +10 V. It delivers a peak output power of 450 W with a typical gain of 17.5 dB under pulsed conditions.

Feature Summary

High-output power capability suitable for demanding RF amplification tasks
Optimized performance across wideband cellular communication frequencies
Robust thermal management characteristics for reliable operation

Applications

Base station power amplifiers
Broadband wireless infrastructure systems
Commercial RF signal generation equipment

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match design requirements. Ensure proper handling procedures are followed due to electrostatic sensitivity. Validate packaging integrity upon receipt. Cross-reference ordering information with official manufacturer documentation before finalizing procurement.

Selection Notes

Evaluate thermal resistance parameters against system cooling capabilities. Assess impedance matching networks for optimal power transfer efficiency. Consider duty cycle limitations when designing pulsed operation modes. Verify biasing circuit compatibility with specified gate-source voltage limits. Review reliability data for intended operational lifespan requirements.

Part Context

This component belongs to Infineon's portfolio of silicon-based RF power transistors. It serves as a critical active element in high-frequency power amplification stages. The device represents a specialized solution for telecommunications infrastructure requiring stable high-power output. Its design focuses on balancing linearity, efficiency, and thermal stability for continuous industrial use.