PTVA120251EA-V1-R250

Overview

The PTVA120251EA-V1-R250 is an RF LDMOS FET transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of 500 MHz to 1.4 GHz and delivers an output power of 34 W with a gain of 15.8 dB. The device features a drain-source breakdown voltage (Vds) of 105 V and a maximum operating temperature of +225°C. Packaged in the H-36265-2 surface-mount format, this single-channel N-Channel silicon component is currently marked as Not Recommended for New Designs.

Feature Summary

• High-power RF performance utilizing LDMOS technology
• Wideband operation across 500 MHz to 1.4 GHz
• Robust thermal capability with high maximum junction temperature

Applications

• Broadband RF power amplification
• Wireless communication base stations
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

This component is designated as Not Recommended for New Designs (NRND). Procurement should verify current availability through authorized distributors, as production status may limit long-term supply. Verify that the specific package variant matches existing PCB footprints before ordering.

Selection Notes

Select this part for applications requiring high linearity and efficiency in the VHF/UHF bands. Ensure the design accommodates the H-36265-2 footprint and provides adequate thermal management for 34 W output. Compare against newer MACOM series if long-term lifecycle support is required.

Part Context

This model belongs to MACOM's PTVA series of RF MOSFET transistors designed for broadband power amplifier applications. The V1 revision indicates a specific manufacturing iteration within the H-36265-2 package family, optimized for stability and power density in commercial wireless infrastructure.

Replacement Considerations

PTVA120251EA-V2-R250