PTVA120251EA-V2-R0

Overview

The PTVA120251EA-V2-R0 is an N-channel RF MOSFET LDMOS transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of 500 MHz to 1.4 GHz, delivering an output power of 25 W with a gain of 18 dB. The device features a drain-source breakdown voltage (Vds) of 105 V and a maximum operating temperature of +225°C. It utilizes the H-36265-2 surface-mount package and accepts a gate-source voltage (Vgs) of +10 V.

Feature Summary

• High-power LDMOS construction for robust RF performance
• Wideband operation covering 500 MHz to 1.4 GHz
• High thermal tolerance supporting extreme operating temperatures

Applications

• RF power amplification in communication systems
• Broadband transmitter modules
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify component authenticity through authorized MACOM channels or certified distributors. Confirm that the specific suffix matches the required reel configuration. Ensure storage conditions comply with moisture sensitivity levels prior to assembly. Cross-reference datasheet revisions to guarantee compatibility with current design specifications.

Selection Notes

Select this component when high linearity and efficiency are required in the 500 MHz to 1.4 GHz band. Evaluate thermal management capabilities due to the 25 W output power rating. Consider the H-36265-2 footprint for PCB layout constraints. Compare against alternative LDMOS devices if different voltage ratings or frequency ranges better suit the application requirements.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding wireless infrastructure applications. The LDMOS technology provides a balance of power density and reliability. The H-36265-2 package facilitates automated surface-mount assembly, integrating seamlessly into modern RF circuit designs requiring stable high-frequency performance.