PTVA120501EA-V1-R0

Overview

The PTVA120501EA-V1-R0 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 1.2 GHz to 1.4 GHz frequency range with a gain of 17 dB and delivers 50 W of output power. The device features a 50 V test voltage, 50 mA test current, and a maximum drain-source voltage of 105 V. It utilizes the H-36265-2 package and supports base mounting.

Feature Summary

• Utilizes Silicon LDMOS technology for RF power amplification
• Designed for high-efficiency operation in UHF bands
• Constructed in a robust metal-ceramic package suitable for thermal management

Applications

• Base station power amplifiers
• Broadcaster transmitter systems
• Military communication equipment

Procurement Notes

Verify the specific suffix against the manufacturer datasheet to confirm pinout and electrical characteristics match the design requirements. Confirm RoHS compliance status and check for any Product Change Notifications that may affect material composition or performance parameters prior to finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring moderate RF power output in the 1.2–1.4 GHz band. Ensure the system can accommodate the H-36265-2 package dimensions and base-mounting thermal interface. Verify that the 105 V drain-source rating aligns with the supply voltage headroom needed for stable operation under varying load conditions.

Part Context

This part belongs to MACOM’s PTVA series of RF power transistors. These devices are engineered for demanding wireless infrastructure applications. The series offers various power levels and packaging options to support different amplifier architectures and thermal constraints in modern communication networks.

Replacement Considerations

Consult MACOM documentation for direct cross-references. Evaluate alternative packages if mechanical constraints differ. Verify that substitute parts maintain equivalent gain, linearity, and thermal resistance specifications.