ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Configuration：-
Download product information
Overview
The PTVA123501EC-V2-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 1.2 GHz to 1.4 GHz frequency range, delivering 350 W of output power with 17 dB gain. The device features a 105 V drain-source breakdown voltage and 100 mOhms on-resistance. Packaged in H-36248-2 format on a reel, it supports screw mount installation.
Feature Summary
- Broadband internal input and output matching for wideband performance
- High gain and efficiency characteristics optimized for RF amplification
- Integrated ESD protection compliant with Human Body Model Class 2 standards
Applications
- RF power amplification in communication systems
- Broadband signal processing applications
- High-efficiency transmitter modules
Procurement Notes
Verify the specific suffix 'V2' against official datasheets to confirm pinout and electrical specifications match design requirements. Confirm package type H-36248-2 compatibility with thermal management solutions. Check current lifecycle status as components may be subject to change notifications or obsolescence warnings from the manufacturer.
Selection Notes
Select this component for applications requiring high output power at UHF frequencies. Ensure the system can accommodate the 105 V breakdown voltage and thermal dissipation needs for 350 W operation. Compare against similar models like PTVA123501FC-V1-R250 for form factor differences while maintaining similar electrical performance profiles.
Part Context
This part belongs to MACOM's PTVA series of RF MOSFET transistors designed for robust radio frequency applications. The series utilizes Silicon technology to provide reliable performance in demanding environments. These devices are engineered to meet stringent industry standards for linearity and power density in modern communication infrastructure.
Replacement Considerations
PTVA123501FC-V1-R250 offers comparable electrical specifications but differs in package style (Screw Mount vs SMD/SMT implications) and potentially thermal interface requirements. Verify mechanical fit and mounting constraints before substitution.
