PTVA123501FC-V1-R0

Overview

The PTVA123501FC-V1-R0 is a thermally-enhanced high power RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for power amplifier applications in the 1200 MHz to 1400 MHz frequency band, it features an H-37248-2 earless flange package. The device provides a typical gain of 17 dB and drain efficiency of 55% at 350 W output power under pulsed conditions (VDD = 50 V, IDQ = 150 mA). It includes broadband internal matching, integrated ESD protection, and excellent ruggedness capable of withstanding a 10:1 load mismatch.

Feature Summary

• Thermally enhanced package with slotted and earless flanges for superior heat dissipation
• Broadband internal input and output matching networks
• Integrated electrostatic discharge (ESD) protection compliant with Human Body Model Class 2
• High ruggedness capable of withstanding severe load mismatches under pulsed conditions

Applications

• Power amplifier modules operating in the 1200 MHz to 1400 MHz band
• Pulsed RF power amplifier designs requiring high gain and efficiency
• Communication systems utilizing LDMOS technology for signal amplification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and shipping configuration. Confirm that the component meets all required environmental standards, including RoHS compliance. Cross-reference the datasheet revision history to validate current electrical characteristics and performance metrics before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high power density within the 1200 MHz to 1400 MHz range. The earless flange design facilitates specific mounting configurations compared to bolt-down variants. Ensure thermal management solutions align with the specified junction temperature limits and thermal resistance values provided in the datasheet for optimal reliability.

Part Context

This part belongs to the PTVA123501 series of thermally-enhanced high power RF LDMOS FETs from MACOM. The FC variant specifically utilizes the H-37248-2 earless flange package, distinguishing it from the EC variant which uses a bolt-down H-36248-2 package. Both share identical electrical performance characteristics optimized for broadband power amplification.

Replacement Considerations

PTVA123501EC-V1-R0 is a direct functional substitute differing only in package style (bolt-down vs. earless flange).