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The PTVA123501FC-V1-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 1.2 GHz to 1.4 GHz frequency range and delivers a power output of 350 W with a gain of 17 dB. The device features an N-Channel configuration using Silicon technology, with a continuous drain current of 150 mA and a drain-source breakdown voltage of 105 V. Its on-resistance is specified at 100 mOhms, and it utilizes a screw mount installation style in the H-37248-2 package.
Verify component authenticity through authorized channels. Confirm RoHS compliance status via official documentation. Check for product change notifications affecting specifications. Ensure compatibility with existing thermal management solutions. Validate that the part number matches exact design requirements before integration.
Evaluate suitability based on required power output and frequency range. Consider thermal dissipation needs due to high power handling. Assess packaging constraints for screw mount installation. Verify gate-source voltage limits against drive circuit capabilities. Compare performance metrics with alternative RF MOSFET options for optimal system efficiency.
This component belongs to MACOM's portfolio of RF MOSFET transistors designed for high-performance applications. It supports diverse sectors including consumer electronics, wireless LAN networks, and machine-to-machine communications. The device aligns with industry standards for reliable semiconductor components used in advanced electronic systems.
The manufacturer lists this part as NRND (Not Recommended for New Designs). Engineers should identify suitable alternatives from current MACOM portfolios or other manufacturers offering comparable RF LDMOS specifications.