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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V H-36275-4
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Technology：LDMOS
- Frequency：1.2GHz ~ 1.4GHz
- Gain：16dB
- Voltage - Test：50 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：300 mA
- Power - Output：700W
- Voltage - Rated：105 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：H-36275-4
- Supplier Device Package：H-36275-4
- Configuration：-
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Overview
The PTVA127002EVV1R0XTMA1 is an RF MOSFET transistor manufactured by Infineon Technologies. It utilizes silicon technology and belongs to the RFP-LDH1V series. The component is housed in the H-36275-4 package. It is classified as an RF Power MOSFET within the broader MOSFets subcategory.
Feature Summary
- Silicon-based RF power construction
- Integrated gate drive capability
Applications
- RF power amplification
- Wireless communication systems
Procurement Notes
Verify current availability status directly with authorized distributors or the manufacturer, as supply constraints may apply. Confirm RoHS compliance details through official documentation before integration into designs requiring specific environmental standards.
Selection Notes
Select this component for applications requiring silicon RF MOSFET performance in the specified package. Ensure compatibility with the RFP-LDH1V series design parameters and verify that the H-36275-4 footprint meets PCB layout requirements.
Part Context
This part is part of Infineon's portfolio of radio frequency power semiconductors. It serves as a discrete solution for high-frequency power switching applications, distinct from integrated gate drivers or low-voltage logic-level MOSFETs found in other product lines.
