PXAC201202FC-V2-R250

Overview

The PXAC201202FC-V2-R250 is an RF MOSFET manufactured by MACOM Technology Solutions, designed for high-power radio frequency applications. It operates at a test frequency of 2.2 GHz with a gain of 17 dB. The device requires a test voltage of 28 V and supports a current of 240 mA. It delivers an output power of 16 W and utilizes the H-37248-4 package.

Feature Summary

• High-power RF MOSFET technology optimized for demanding radio frequency environments
• Capable of delivering significant output power at microwave frequencies
• Designed for robust performance in linear amplifier stages

Applications

• Broadband power amplification
• Wireless communication infrastructure
• Test and measurement equipment

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the received part matches the specific suffix and package designation. Review the official datasheet for handling precautions related to electrostatic discharge. Ensure compatibility with existing thermal management solutions before integration into final assemblies.

Selection Notes

Select this component when high output power is required at 2.2 GHz. Consider the 28 V operating voltage and thermal requirements during circuit design. Evaluate the trade-off between gain and linearity for specific system needs. Ensure the PCB layout supports the thermal dissipation capabilities of the H-37248-4 package.

Part Context

This part belongs to MACOM's portfolio of RF power transistors. It serves as a discrete solution for power amplification tasks where integrated circuits may not provide sufficient output power or flexibility. The device complements other RF components in signal chain architectures.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support for direct replacements or pin-compatible alternatives.