PXAC201602FC-V1-R250

Overview

The PXAC201602FC-V1-R250 is an RF MOSFET transistor from MACOM Technology Solutions. It operates at a frequency of 2.02GHz with a gain of 17.7dB. The device supports a drain voltage of 28V and a current of 360mA. It is packaged in the H-37248-4 form factor. This component is classified as an active RF FET suitable for high-frequency applications.

Feature Summary

• High-frequency RF MOSFET technology
• Integrated amplifier module design
• Suitable for industrial and automotive environments

Applications

• Industrial equipment amplification
• Automotive system integration
• RF signal processing modules

Procurement Notes

Verify the specific package variant, as datasheets may reference H-37248-. Confirm the operating frequency matches the 2.02GHz specification rather than similar series parts like PXAC261002FC. Ensure compatibility with 28V supply requirements. Check for RoHS compliance status before ordering.

Selection Notes

Select this part for applications requiring 17.7dB gain at 2.02GHz. Compare against PXAC261002FC if higher frequency operation near 2.69GHz is needed. Consider the 28V bias requirement. Verify thermal management needs for the H-37248-4 package in the target assembly.

Part Context

This component belongs to the MACOM RF MOSFET transistor family. It shares characteristics with other PXAC series devices but differs in specific frequency and gain parameters. It serves as a discrete or module solution for RF power amplification in specialized electronic systems.

Replacement Considerations

PXAC261002FC-V1-R250 offers similar functionality but operates at 2.69GHz with 15.1dB gain. Substitution requires verification of frequency band alignment and gain adequacy for the specific circuit design.

FAQ

What is the operating frequency of the PXAC201602FC-V1-R250?

The device operates at 2.02GHz.

What is the gain specification for this RF MOSFET?

The gain is specified as 17.7dB.