PXAC241002FC-V1-R250

Overview

The PXAC241002FC-V1-R250 is an RF MOSFET utilizing LDMOS technology, designed for high-power applications. It operates with a drain-source voltage of 28 V and a gate drive current of 230 mA. The device functions within the frequency range of 2.3 GHz to 2.4 GHz, providing a gain of 15.5 dB. It delivers an output power of 100 W. The component is housed in the H-37248C-4 surface mount package.

Feature Summary

• LDMOS construction for robust RF performance
• Surface mount packaging for automated assembly

Applications

• Cellular base station power amplifiers
• Broadband wireless infrastructure
• Industrial RF heating systems

Procurement Notes

Verify the specific suffix R250 against the manufacturer's official datasheet to confirm tape and reel specifications. Ensure the H-37248C-4 package dimensions match your PCB footprint requirements. Cross-reference the 28V rating with your circuit design limits to prevent breakdown. Confirm RoHS compliance status through the latest production documentation before finalizing procurement orders.

Selection Notes

Select this component when a 100W output at 2.3–2.4 GHz is required. The 28V supply requirement dictates the power stage design. Consider the H-37248C-4 thermal characteristics for heat dissipation planning. Verify that the 15.5 dB gain meets system link budget needs without excessive cascading stages.

Part Context

This part belongs to MACOM's portfolio of RF power transistors. It utilizes LDMOS technology, distinct from GaN or Si alternatives. The H-37248C-4 package is standard for high-power RF modules. It serves as a discrete active element for linear amplification in communication systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified replacements or pin-compatible alternatives.