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The PXAC260602FC-V1 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for operation within the 2.495 GHz to 2.69 GHz frequency range, this silicon-based component provides a typical gain of 20 dB and delivers an output power of 25 W. It features a drain-source breakdown voltage (Vds) of 65 V and a low on-resistance (Rds On) of 50 mOhms. The device supports a maximum junction temperature of +225°C and utilizes the H-37248-4 surface-mount package.
Verify the specific suffix variant required for your design, as packaging options such as tape-and-reel configurations exist. Confirm RoHS compliance status through official datasheets prior to integration. Ensure thermal management solutions align with the +225°C maximum junction temperature rating. Validate that the H-37248-4 footprint matches your PCB layout requirements. Consult manufacturer documentation for precise handling and storage guidelines regarding moisture sensitivity levels.
Select this component when high linearity and efficiency are critical in the 2.5 GHz band. The dual-channel architecture allows for push-pull configurations to improve power handling. Consider the 50 mOhm on-resistance for minimizing conduction losses. Evaluate the 65 V breakdown voltage against system supply requirements. Compare thermal resistance characteristics against alternative packages if space constraints are severe.
This part belongs to MACOM’s portfolio of RF power transistors designed for demanding wireless communication environments. It complements other broadband amplifiers like the MAAM-011100 series but offers higher power density suitable for fixed wireless access. The H-37248-4 package is standard for mid-power RF applications requiring robust thermal dissipation.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics before considering any alternative devices from different manufacturers.