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The PXAC261002FC-V1-R250 is an RF FET from MACOM Technology Solutions designed for operation within the frequency range of 2.62 GHz to 2.69 GHz. It features a Drain-Source Breakdown Voltage (Vds) of 65 V and a Drain-Source Resistance (Rds On) of 800 mOhms. This component is categorized under RF FETs and MOSFETs, suitable for applications requiring specific impedance and voltage characteristics in high-frequency circuits.
Verify the exact specifications against the official product datasheet before integration. Confirm that the 65 V breakdown voltage and 800 mOhm resistance align with your circuit design requirements. Ensure compatibility with the intended operating frequency range of 2.62 GHz to 2.69 GHz. Check RoHS compliance status if required by your manufacturing standards. Validate package type and thermal management needs for your specific application environment.
Select this component when a 65 V breakdown voltage and low on-resistance are critical for high-frequency performance. Consider the 2.62–2.69 GHz operational range for targeted industrial or automotive applications. Evaluate the trade-off between Rds On and switching speed if used in power conversion contexts. Ensure the RF FET category fits your system's impedance matching requirements.
This part belongs to MACOM's portfolio of RF FETs and MOSFETs, specifically tailored for high-frequency applications. It shares the brand's focus on reliable semiconductor solutions for communication and industrial sectors. The model number indicates specific electrical characteristics distinct from other MACOM RF components like the MAAM26100 series.
Consult the official datasheet for direct substitutes. No confirmed public substitute part numbers are available in the provided documentation. Verify electrical parameters such as Vds and Rds On when considering alternatives.