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The PXAC261002FC-V1 is an RF MOSFET utilizing LDMOS technology, designed for high-power applications. It operates at a frequency of 2.69 GHz with a drain-source voltage rating of 26 V. The device delivers an output power of 18 W and provides a gain of 15.1 dB. Key performance metrics include a P1dB compression point of 27 dBm and an OIP3 of 39 dBm. It functions within a temperature range of -40°C to +85°C. The component is housed in an H-37248-4 package.
Verify the exact suffix variant (e.g., -R0, -R250) against your Bill of Materials, as packaging differs. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure handling procedures account for the specific surface mount requirements of the H-37248-4 package to maintain signal integrity and reliability during assembly processes.
Select this component when designing systems requiring high linearity and substantial power output at 2.69 GHz. Compare its 18 W output and 15.1 dB gain against alternative LDMOS devices to ensure compatibility with existing bias networks and impedance matching circuits. Evaluate thermal management needs based on the specified operating temperature range and power dissipation characteristics.
This part belongs to MACOM's portfolio of discrete RF power transistors. It complements other LDMOS solutions by offering a balance of efficiency and linearity for wireless infrastructure. The H-37248-4 package is standard for this class of components, facilitating integration into modular amplifier designs used in modern telecommunications equipment.
Public confirmed substitute part numbers are not available in the provided source data.