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The PXAD184218FV-V1-R0 is a dual N-channel RF LDMOS FET transistor manufactured by MACOM. It operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 420 W with a gain of 16 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a typical on-resistance (Rds(on)) of 30 mΩ. Designed for surface mount installation in H-37275G-6/2 packages, it supports a maximum operating temperature of +225°C. This component is engineered for high-power radio frequency applications requiring robust performance and thermal stability.
Verify the specific suffix R0 against official MACOM documentation to confirm package and reel specifications. Ensure compatibility with existing PCB footprints for the H-37275G-6/2 package. Confirm that the dual N-channel topology aligns with your circuit design requirements before finalizing procurement orders.
Select this component when high output power near 420 W is required at 1.8 GHz frequencies. Consider the 65 V breakdown voltage and 30 mΩ on-resistance for biasing and thermal management calculations. Evaluate the SMD package constraints and ensure adequate cooling solutions are available to support the +225°C maximum operating temperature specification.
This part belongs to MACOM’s portfolio of high-power RF LDMOS transistors designed for demanding wireless infrastructure environments. It complements other MACOM devices used in cellular and broadcast applications, providing a solution for power amplification stages where linearity and efficiency are critical parameters for system performance.
Consult MACOM official substitution lists for direct replacements. Verify pinout compatibility and electrical parameter equivalence for any alternative components. Ensure that any substitute maintains the required 420 W output power and 1.805–1.88 GHz frequency range specifications.