PXAD214218FV-V1-R0

PXAD214218FV-V1-R0

$139.11
  • Description:RF MOSFET LDMOS 28V H-37275G-6
  • Series:-

SKU:a3a82d6aff7d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-37275G-6
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:13.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:720 mA
  • Power - Output:290W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37275G-6/2
  • Supplier Device Package:H-37275G-6/2
  • Configuration:-

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PXAD214218FV-V1-R0

Overview

The PXAD214218FV-V1-R0 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It features a dual N-channel configuration housed in the H-37275G-6 surface-mount package. The device operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering a typical gain of 16 dB and an output power of 420 W. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V and a maximum on-resistance (Rds(on)) of 30 mΩ. The component supports a maximum operating temperature of +225°C and complies with RoHS standards.

Feature Summary

  • Dual N-channel LDMOS architecture for high-power RF applications
  • High thermal stability supporting operation up to +225°C
  • Surface-mount design optimized for automated assembly

Applications

  • Base station power amplification
  • Broadband wireless communication systems
  • RF signal generation and transmission modules

Procurement Notes

Verify the specific suffix 'V1-R0' against the manufacturer's current datasheet to confirm pinout and electrical tolerances. Ensure the receiving facility has adequate ESD protection protocols, as the device utilizes sensitive semiconductor junctions. Confirm that the supply chain source provides valid traceability documentation to guarantee component authenticity and compliance with environmental regulations.

Selection Notes

Select this component when designing circuits requiring high linearity and substantial power output in the 1.8 GHz band. The low on-resistance facilitates efficient power conversion, while the robust thermal rating allows for reliable performance in demanding environments. Evaluate the H-37275G-6 footprint compatibility during PCB layout to ensure proper heat dissipation and signal integrity for the intended application.

Part Context

This part belongs to MACOM's portfolio of discrete RF transistors designed for infrastructure and commercial wireless markets. It complements other MACOM components such as the MAFL-011078 diplexer and SW-214-PIN switch, forming complete RF front-end solutions. The product line emphasizes high reliability and advanced packaging technologies suitable for modern telecommunications hardware.

Replacement Considerations

Consult official MACOM substitution guides for compatible alternatives. Verify that any replacement maintains identical pin assignments, thermal characteristics, and electrical parameters to prevent circuit redesign.

PXAD214218FV-V1-R0PXAD214218FV-V1-R0
$139.11
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