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The PXAD214218FV-V1-R0 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It features a dual N-channel configuration housed in the H-37275G-6 surface-mount package. The device operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering a typical gain of 16 dB and an output power of 420 W. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V and a maximum on-resistance (Rds(on)) of 30 mΩ. The component supports a maximum operating temperature of +225°C and complies with RoHS standards.
Verify the specific suffix 'V1-R0' against the manufacturer's current datasheet to confirm pinout and electrical tolerances. Ensure the receiving facility has adequate ESD protection protocols, as the device utilizes sensitive semiconductor junctions. Confirm that the supply chain source provides valid traceability documentation to guarantee component authenticity and compliance with environmental regulations.
Select this component when designing circuits requiring high linearity and substantial power output in the 1.8 GHz band. The low on-resistance facilitates efficient power conversion, while the robust thermal rating allows for reliable performance in demanding environments. Evaluate the H-37275G-6 footprint compatibility during PCB layout to ensure proper heat dissipation and signal integrity for the intended application.
This part belongs to MACOM's portfolio of discrete RF transistors designed for infrastructure and commercial wireless markets. It complements other MACOM components such as the MAFL-011078 diplexer and SW-214-PIN switch, forming complete RF front-end solutions. The product line emphasizes high reliability and advanced packaging technologies suitable for modern telecommunications hardware.
Consult official MACOM substitution guides for compatible alternatives. Verify that any replacement maintains identical pin assignments, thermal characteristics, and electrical parameters to prevent circuit redesign.