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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V H-37275G-6
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.11GHz ~ 2.17GHz
- Gain：13.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：10µA
- Noise Figure：-
- Current - Test：720 mA
- Power - Output：290W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：H-37275G-6/2
- Supplier Device Package：H-37275G-6/2
- Configuration：-
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Overview
The PXAD214218FV-V1-R2 is an RF MOSFET LDMOS transistor manufactured by MACOM Technology Solutions. It operates within the frequency range of 2.11GHz to 2.17GHz and features a test voltage of 28 V. The device delivers a gain of 13.5dB with an output power of 290W. Key electrical parameters include a test current of 720 mA and a current rating of 10µA. It utilizes the H-37275G-6/2 package.
Feature Summary
- LDMOS technology construction for high-performance RF applications
- High output power capability of 290W at specified frequencies
- Optimized gain characteristics of 13.5dB in the 2.11GHz to 2.17GHz band
Applications
- RF power amplification in wireless communication systems
- Base station transmitter modules
- Broadband RF signal processing
Procurement Notes
Verify the specific suffix (R2) against official MACOM documentation to ensure compatibility with required packaging and tape specifications. Confirm that the H-37275G-6/2 package footprint matches your PCB design constraints. Cross-reference the 28V test voltage and 720mA current ratings with your circuit's thermal and power management requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring high linearity and efficiency in the 2.11GHz to 2.17GHz range. Ensure the system can support the 28V operating voltage and manage the thermal dissipation associated with 290W output power. Compare gain and power metrics against alternative LDMOS devices to verify suitability for specific amplifier topologies and bandwidth requirements.
Part Context
This part belongs to MACOM's portfolio of RF FETs, specifically designed for demanding radio frequency applications. It represents a discrete semiconductor solution utilizing Silicon LDMOS technology, distinct from integrated MMICs. The product line focuses on providing robust power handling capabilities for infrastructure and commercial wireless markets.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support or authorized distributors for validated cross-reference data.
