PXAE263708NB-V1-R2

Overview

The PXAE263708NB-V1-R2 is a silicon LDMOS RF power transistor manufactured by MACOM Technology Solutions. It operates within the frequency range of 2496 to 2690 MHz and delivers an output power of 370W at 28V. The device features a PG-HB2SOF-8-1.5 package, providing robust performance for high-power applications. Key electrical characteristics include a drain current of 850 mA and a gain of 14dB at 2.62GHz with an output power of 57W in specific configurations.

Feature Summary

• High power output capability utilizing silicon LDMOS technology
• Optimized for operation in the 2.496 to 2.69 GHz frequency band
• Designed for integration into high-performance RF amplifier modules

Applications

• Base station power amplification
• Industrial heating and plasma generation systems
• Automotive radar transmitters

Procurement Notes

Verify the exact suffix (R2) against official MACOM documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the required voltage rating of 28V aligns with your system design. Check for any specific handling requirements associated with the PG-HB2SOF-8-1.5 package during assembly.

Selection Notes

Select this component when high linearity and efficiency are required in the 2.6 GHz band. Consider the thermal management capabilities of the LDMOS structure compared to GaN alternatives. Ensure the drive level matches the 14dB gain characteristic for optimal system performance.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding wireless infrastructure. It complements other LDMOS devices in the PXA series, offering a balance between power density and cost-effectiveness for wideband applications.

Replacement Considerations

Consult official MACOM substitution guides for direct replacements. Generic cross-reference data may not account for subtle differences in thermal resistance or biasing requirements inherent to LDMOS technologies.