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The PXFC191507FC-V1-R0 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the frequency range of 1.805 GHz to 1.99 GHz, delivering a typical output power of 150 W with a gain of 20.5 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum gate-source voltage (Vgs) of +10 V. Its on-resistance (Rds On) is specified at 50 mOhms. Designed for surface mount installation, it utilizes the H-37248G-4/2 package and supports a maximum operating temperature of +225°C.
Verify current availability directly with the manufacturer or authorized distributors, as this component may be subject to factory special order status. Confirm specific ordering requirements and lead times prior to procurement. Ensure compatibility with existing supply chain protocols and validate that the requested part number matches the exact technical specifications required for your design implementation.
Select this component when designing circuits requiring high output power around 150 W in the PCS/IMT frequency bands. Consider its 65 V breakdown voltage and low on-resistance for efficiency. Evaluate thermal management capabilities given the high maximum junction temperature rating. Ensure the PCB layout accommodates the specific H-37248G-4/2 package dimensions for proper mounting and heat dissipation.
This part belongs to MACOM's portfolio of RF MOSFET transistors, specifically designed for demanding wireless infrastructure applications. It represents a silicon-based solution offering robust performance in terms of power handling and gain. The product line focuses on providing reliable amplification stages for modern cellular network base stations and related telecommunications hardware.
Consult official MACOM documentation for verified substitute part numbers. Cross-referencing should only be performed using manufacturer-approved equivalents to ensure electrical and mechanical compatibility.