PXFC191507FC-V1-R250

Overview

The PXFC191507FC-V1-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 1.805 GHz to 1.99 GHz frequency range, delivering a typical output power of 150 W with a gain of 20.5 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum gate-source voltage (Vgs) of +10 V. Packaged in the H-37248G-4/2 surface-mount format, it supports a maximum operating temperature of +225°C.

Feature Summary

• Utilizes Silicon LDMOS technology for high-power RF performance
• Designed for efficient amplification in cellular base station architectures
• Engineered for robust thermal operation at elevated temperatures

Applications

• Cellular base station power amplifiers
• Broadband RF signal generation
• Wireless infrastructure transmission systems

Procurement Notes

Verify the specific suffix against official MACOM documentation to confirm exact reel quantity and packaging configuration. Ensure compatibility with existing PCB footprints and thermal management designs before procurement. Confirm RoHS compliance status through current datasheets.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the PCS or AWS bands. Evaluate thermal resistance requirements relative to the H-37248G package. Compare gain and power density specifications against alternative LDMOS devices for optimal system integration.

Part Context

This part belongs to MACOM's portfolio of RF power MOSFET transistors designed for wireless communications. It complements other LDMOS devices offering similar power classes but tailored for specific frequency bands and packaging constraints within modern cellular infrastructure.

Replacement Considerations

Consult official MACOM substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering competitor parts to ensure functional equivalence.