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The PXFC193808SV is a thermally-enhanced high-power RF LDMOS FET designed for multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. It delivers 380 W output power at P1dB with 28 V supply voltage. The device features broadband internal input and output matching, integrated ESD protection compliant with Human Body Model Class 2, and low thermal resistance of 0.18 °C/W. It operates up to a junction temperature of 225 °C and withstands 10:1 VSWR at 200 W output.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm package type H-37275G-6/2 matches design requirements. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity. Validate ordering code PXFC193808SVV1R250XTMA1 against current production specifications.
Select this component for applications requiring high linearity and efficiency in the 1805–1880 MHz range. Consider the 28 V operating voltage and 225 °C maximum junction temperature for thermal management design. Evaluate the earless flange package for mounting compatibility and heat dissipation needs in dense PCB layouts.
This part belongs to Infineon's high-power RF LDMOS portfolio, utilizing advanced silicon processes for superior reliability. It is engineered specifically for demanding wireless infrastructure environments where consistent performance under high drive conditions is critical. The device integrates matching networks to reduce external component count.
Consult official Infineon documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure functional equivalence without redesigning the host circuitry.