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The PXFE181507FC-V1-R2 is an RF power MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes Silicon LDMOS technology and operates within the 1805 MHz to 1880 MHz frequency range. The device is rated for a supply voltage of 28V and delivers an output power of 150W. It is designed for high-efficiency radio frequency amplification in wireless communication infrastructure.
Verify the specific suffix against official documentation, as variations may indicate differences in packaging or testing criteria. Confirm current availability directly with authorized distributors or the manufacturer, as lead times and stock levels fluctuate based on production schedules. Ensure compatibility with existing thermal management solutions before integration.
Select this component when designing amplifiers requiring 150W output in the specified UHF band. Evaluate thermal resistance requirements carefully due to the high power dissipation inherent in LDMOS devices at 28V. Ensure the driving circuitry supports the gate charge characteristics typical of RF power MOSFETs for stable switching performance.
This part belongs to MACOM's portfolio of silicon LDMOS FETs engineered for 5G and advanced wireless infrastructure. These transistors are characterized by high gain and linearity, making them suitable for modern modulation schemes. The family focuses on delivering reliable performance in compact form factors for base station applications.
Consult official substitution lists for direct equivalents. Verify pinout compatibility and thermal pad configurations when considering alternative suppliers. Cross-reference electrical parameters such as breakdown voltage and S-parameters to ensure system integrity during replacement.