PXFE181507FC-V1-R2

PXFE181507FC-V1-R2

$47.16
  • Description:RF MOSFET LDMOS 28V H-37248G-4
  • Series:-

SKU:11eef2db6129 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-37248G-4
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:20dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:175W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37248G-4/2
  • Supplier Device Package:H-37248G-4/2
  • Configuration:-

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PXFE181507FC-V1-R2

Overview

The PXFE181507FC-V1-R2 is an RF power MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes Silicon LDMOS technology and operates within the 1805 MHz to 1880 MHz frequency range. The device is rated for a supply voltage of 28V and delivers an output power of 150W. It is designed for high-efficiency radio frequency amplification in wireless communication infrastructure.

Feature Summary

  • High-power RF performance using Silicon LDMOS technology
  • Optimized for operation in the 1805-1880 MHz band
  • Designed for robustness in demanding wireless transmission environments

Applications

  • Wireless base station power amplification
  • Broadband RF signal generation
  • Next-generation wireless transmission systems

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate differences in packaging or testing criteria. Confirm current availability directly with authorized distributors or the manufacturer, as lead times and stock levels fluctuate based on production schedules. Ensure compatibility with existing thermal management solutions before integration.

Selection Notes

Select this component when designing amplifiers requiring 150W output in the specified UHF band. Evaluate thermal resistance requirements carefully due to the high power dissipation inherent in LDMOS devices at 28V. Ensure the driving circuitry supports the gate charge characteristics typical of RF power MOSFETs for stable switching performance.

Part Context

This part belongs to MACOM's portfolio of silicon LDMOS FETs engineered for 5G and advanced wireless infrastructure. These transistors are characterized by high gain and linearity, making them suitable for modern modulation schemes. The family focuses on delivering reliable performance in compact form factors for base station applications.

Replacement Considerations

Consult official substitution lists for direct equivalents. Verify pinout compatibility and thermal pad configurations when considering alternative suppliers. Cross-reference electrical parameters such as breakdown voltage and S-parameters to ensure system integrity during replacement.

PXFE181507FC-V1-R2PXFE181507FC-V1-R2
$47.16
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