PZT751T1G

Single Bipolar Transistors Overview

The PZT751T1G is a PNP silicon epitaxial planar transistor designed for medium power surface mount applications. It features a collector-emitter voltage (VCEO) of -60 Vdc and a maximum collector current (IC) of -2.0 Adc. The device offers a DC current gain (hFE) of at least 75 at -50 mAdc and a transition frequency (fT) of 75 MHz. Total power dissipation is rated at 0.8 W at 25°C ambient temperature, with a junction temperature limit of 150°C. It is housed in an SOT-223 package.

Single Bipolar Transistors Feature Summary

• High current capability suitable for demanding load switching tasks
• SOT-223 package design ensures level mounting for improved thermal conduction
• Formed leads absorb thermal stress during soldering to protect the die
• Pb-free, halogen-free, and RoHS compliant construction

Single Bipolar Transistors Applications

• Industrial control systems requiring robust switching components
• Consumer electronics utilizing surface mount assembly processes
• Medium power general-purpose amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when sourcing replacements. The 'SP' prefix indicates automotive qualification under AEC-Q101 standards with unique site requirements. Standard 'PZT751T1G' units are general industrial grade. Confirm package type and compliance documentation match project specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current handling in a compact surface mount footprint. Ensure the circuit design accommodates the -60 V collector-emitter voltage rating. Consider the thermal resistance characteristics for heat dissipation planning. Verify that the NPN complement PZT651T1G meets requirements if complementary pairs are needed.

Single Bipolar Transistors Part Context

This device belongs to the PZT751 series of high-current PNP transistors manufactured by onsemi. It utilizes silicon planar epitaxial technology optimized for reliability in harsh environments. The SOT-223 package provides a balance between power handling capacity and board space efficiency compared to larger through-hole alternatives.

Single Bipolar Transistors Replacement Considerations

The NPN complement is the PZT651T1G. For automotive applications requiring AEC-Q101 qualification, consider the SPZT751T1G variant which shares identical electrical characteristics but meets stricter automotive manufacturing controls.