ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：17mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 10V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
Download product information
Overview
The QH8KA4TCR is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal TSMT-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current capacity of 9 A. The device exhibits a typical on-resistance of 17 mΩ at Vgs = 2.5 V, with a total gate charge of 12 nC. Power dissipation is rated at 1.5 W, and the unit operates within a temperature range of -55°C to +150°C. Electrical characteristics include a threshold voltage of 1.5 V, rise and fall times of 20 ns, and a minimum forward transconductance of 7 S.
Feature Summary
- Dual N-channel configuration integrated into a compact TSMT-8 surface-mount package for space-constrained designs.
- High current handling capability of 9 A with low on-resistance suitable for efficient power switching applications.
- Enhanced thermal stability supporting operation up to 150°C junction temperature.
Applications
- Switching power supply circuits
- Battery management systems
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions adhere to moisture sensitivity levels defined in the official documentation to prevent package degradation during assembly processes.
Selection Notes
Select this component for low-voltage, high-current dual-channel applications requiring compact footprint. Evaluate thermal management requirements against the 1.5 W power dissipation limit. Compare gate charge and drive voltage specifications against controller capabilities to ensure optimal switching performance and minimize drive losses in the target circuit design.
Part Context
This part belongs to the QH8KA series of dual N-channel MOSFETs from ROHM Semiconductor. These devices are engineered for general-purpose switching tasks where moderate voltage ratings and high current density are required. The TSMT-8 packaging provides a standardized solution for automated surface-mount assembly in consumer and industrial electronics.
Replacement Considerations
Direct pin-compatible substitutes within the same series include QH8KA1TCR and QH8KA2TCR. Verify electrical parameters such as Rds(on) and Id ratings against specific application requirements before substitution.
