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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Rds On (Max) @ Id, Vgs：17.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：530pF @ 20V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KB6TCR is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in a TSMT8 surface-mount package. It supports a drain-source voltage of 40V and a continuous drain current of 8A. The device features a typical on-resistance of 0.0164Ω at VGS=4.5V and 0.0137Ω at VGS=10V, with a total gate charge of 5nC. Power dissipation is rated at 1.5W, and the drive voltage is specified at 4.5V. Operating temperatures range from -55°C to +150°C storage.
Feature Summary
- Low on-resistance design reduces power consumption compared to traditional products
- Compact TSMT8 surface-mount package suitable for space-constrained applications
- Lead-free plating compliant with RoHS standards
Applications
- Motor control for cooling fans in factory automation equipment
- Motor drivers in base station infrastructure
- Switching applications in 24V input devices
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix TCR corresponds to the required taping packaging format. Ensure compliance with RoHS directives and lead-free plating requirements for your assembly process. Check for any regional supply restrictions or end-of-life notices before finalizing procurement plans.
Selection Notes
Select this component for 24V systems requiring dual N-channel switching with low conduction losses. The TSMT8 package offers a balance of thermal performance and footprint efficiency. Consider the 4.5V drive voltage requirement for logic compatibility. Evaluate thermal management needs given the 1.5W power dissipation rating in enclosed environments.
Part Context
This part belongs to ROHM's standard-grade MOSFET portfolio designed for industrial and communication equipment. It serves as a successor to older models like the QH8K22, offering significantly lower on-resistance. The product line targets non-automotive applications where high reliability and energy efficiency are prioritized over automotive-specific certifications.
Replacement Considerations
The QH8K22TCR is documented as a previous generation alternative within the same TSMT8 package. While it shares similar voltage ratings, it exhibits higher on-resistance and different current capabilities. Designers replacing legacy parts should verify thermal performance and switching characteristics against the QH8KB6TCR specifications.
