QH8KE6TCR

$1.23

Description：MOSFET 2N-CH 100V 4A TSMT8
Series：-

SKU:55dd27aa7557 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 4A TSMT8
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Rds On (Max) @ Id, Vgs：56mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：305pF @ 50V
Power - Max：1.1W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：TSMT8
Grade：-
Qualification：-

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QH8KE6TCR

Overview

The QH8KE6TCR is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 4 A. The device exhibits a typical on-resistance (Rds(on)) of 56 mΩ at Vgs = 10 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 6.7 nC. Thermal performance includes a power dissipation (Pd) of 1.5 W and an operating temperature range from -55°C to +150°C. Switching characteristics specify rise and fall times of 8 ns and 9 ns, respectively.

Feature Summary

Dual N-channel configuration integrated within a compact TSMT-8 surface-mount package for space-constrained designs.
High-voltage capability with 100 V drain-source breakdown voltage suitable for robust switching applications.
Low gate charge of 6.7 nC facilitates efficient drive requirements and reduced switching losses.

Applications

Switching power supply circuits
Motor drive systems

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure storage conditions adhere to specified humidity constraints to prevent package degradation. Validate that the TSMT-8 footprint matches the target PCB design specifications before finalizing procurement orders.

Selection Notes

Select this component when a 100 V rating and 4 A continuous current capacity are required in a dual N-channel topology. The 56 mΩ on-resistance offers a balance between conduction loss and cost. Consider the 6.7 nC gate charge for driver compatibility. Verify thermal management capabilities given the 1.5 W power dissipation limit in the TSMT-8 package for the specific application environment.

Part Context

This part belongs to the ROHM QH8KE series of dual N-channel Power MOSFETs. These devices are engineered for general-purpose switching applications requiring moderate voltage ratings. The TSMT-8 package provides a standardized footprint for surface-mount technology, facilitating automated assembly and consistent thermal performance across similar product variants within the family.

Replacement Considerations

Public documentation confirms QH8KE5TCR as a substitute with identical TSMT-8 packaging but lower current handling (2 A) and higher on-resistance (202 mΩ). Evaluate if the reduced 2 A drain current and increased thermal resistance meet the specific circuit requirements before implementing this replacement.