ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 4500V 65A
- Series：-
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：4500 V
- Current - Collector (Ic) (Max)：65 A
- Current - Collector Pulsed (Icm)：130 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 65A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：750 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The QIS4506012 is a single discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by Powerex Inc. Designed for high voltage switching and pulse power applications, this component features a surface mount package configuration. It supports a collector-emitter voltage of 4500 Volts and a continuous collector current of 65 Amperes. The device exhibits a maximum on-state voltage of 3.5V at a gate voltage of 15V and a collector current of 65A. Key electrical characteristics include a standard input type and a gate charge of 750 nC, indicating a low drive requirement suitable for efficient control in industrial environments.
Feature Summary
- Designed specifically for customer high voltage switching and pulse power applications
- Features a low drive requirement to facilitate efficient control circuitry
- Constructed as a single non-isolated discrete IGBT for robust performance
Applications
- High voltage switching systems
- Pulse power applications
- Industrial electronic modules
Procurement Notes
Verify the specific datasheet version when sourcing, as preliminary documentation may exist for related models like the QIS4506001. Confirm that the surface mount package matches your PCB layout requirements. Ensure compatibility with the required gate drive voltage levels given the 750 nC gate charge specification. Cross-reference the manufacturer's official specifications to confirm the exact thermal and electrical ratings for your intended operating conditions before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high voltage isolation capabilities up to 4500V combined with significant current handling at 65A. The surface mount form factor is advantageous for compact designs where space constraints are critical. Consider the low drive requirement feature if minimizing gate driver complexity or power consumption is a priority. Evaluate the 3.5V saturation voltage against system efficiency targets to ensure optimal thermal management within the application environment.
Part Context
This part belongs to Powerex's portfolio of power semiconductors, which includes diodes, thyristors, and industrial modules. Powerex specializes in manufacturing components adapted for various industrial solutions. The QIS series represents their focus on high-voltage IGBTs designed for demanding applications. This discrete unit complements their broader range of electronic parts used in sectors such as electric vehicles and medical power supplies, reflecting the company's expertise in robust power electronics.
Replacement Considerations
The QIS4506001 is a related model from the same manufacturer offering similar 4500V/60A specifications. Verify if the slight difference in current rating (60A vs 65A) meets your design margins. No other direct substitute part numbers are confirmed in public documentation.
