QPD0005TR13

$3.28

Description：2.5-5.0 GHZ, 8W, 48V GAN RF TR
Series：-

SKU:28acc2565f8f Category: RF FETs, MOSFETs Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：2.5-5.0 GHZ, 8W, 48V GAN RF TR
Series：-
Mfr：Qorvo
Package：Tape & Reel (TR)
Technology：GaN
Frequency：2.5GHz ~ 5GHz
Gain：19.2dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：12 mA
Power - Output：8W
Voltage - Rated：48 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：6-VDFN Exposed Pad
Supplier Device Package：6-DFN (4.5x4)
Configuration：-

Download product information

QPD0005TR13

Overview

The QPD0005TR13 is a high-power RF GaN transistor pair manufactured by Qorvo, designed for operation within the 3.4 GHz to 3.6 GHz frequency range. This component utilizes Gallium Nitride (GaN) technology to deliver substantial output power capabilities, specifically rated at 40W and 80W configurations. It is supplied in a surface-mount Reel or Cut Tape package suitable for automated assembly processes. The device is classified under Wireless & RF Integrated Circuits and features moisture sensitivity requirements. It serves as a critical active element in high-frequency amplification applications requiring robust power handling.

Feature Summary

Utilizes Gallium Nitride (GaN) technology for high-power RF performance
Designed for specific 3.4-3.6 GHz operational frequency bands
Provides dual-channel configuration for paired transistor applications
Supports surface-mount installation via Reel or Cut Tape packaging

Applications

High-power RF amplification systems
Wireless communication infrastructure equipment
Broadband signal processing modules

Procurement Notes

Verify supply status carefully as this item may be subject to limited availability or factory special order conditions. Confirm that the required quantity aligns with current stock levels or production lead times, as immediate shipment might not be guaranteed. Ensure all handling procedures account for the specified moisture sensitivity classification during storage and reflow soldering processes to maintain component integrity.

Selection Notes

Select this component when designing circuits requiring high output power in the 3.4-3.6 GHz band using GaN technology. Consider the specific 40W and 80W power ratings against thermal management requirements. Verify compatibility with surface-mount assembly lines due to the Reel/Cut Tape packaging. Ensure the design supports the necessary biasing and impedance matching for the paired transistor architecture.

Part Context

This part belongs to Qorvo's portfolio of Wireless & RF Integrated Circuits, specifically within the RF Amplifier category. It represents a specialized solution for high-frequency applications leveraging advanced GaN semiconductor materials. The product line focuses on delivering high power density and efficiency for modern wireless infrastructure demands.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult official Qorvo resources for potential cross-reference options if direct replacement is required.