QPD0020TR7

Overview

The QPD0020TR7 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Qorvo. Designed for high-power RF applications, this single-configuration device operates within the DC to 6 GHz frequency range. It delivers an output power of 34.7 W with a gain of 16.7 dB at a specific operating frequency between 2.62 GHz and 2.69 GHz. The component utilizes a QFN-20 surface-mount package and supports both reel and cut tape packaging formats.

Feature Summary

• Utilizes GaN HEMT technology for high-efficiency power amplification
• Capable of delivering high output power in a compact form factor
• Designed for broadband operation up to 6 GHz

Applications

• Base station power amplification
• Broadband RF signal generation
• Military communication systems

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status before integration. Confirm that the QFN-20 package thermal management requirements align with the target PCB design. Ensure compatibility with the intended drive levels and biasing conditions specified in the official Qorvo documentation for optimal performance.

Selection Notes

Select this component when high output power and wide bandwidth are required in a small footprint. Consider the QFN-20 package constraints for thermal dissipation. Evaluate the need for GaN technology over silicon alternatives for efficiency gains in the 2.6 GHz to 6 GHz range.

Part Context

This part belongs to the QPD0020 series of GaN transistors from Qorvo. It is distinct from other Qorvo RF components such as the RFSW6042 switch or QPA4536 amplifier due to its specific power FET architecture and high-voltage capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult Qorvo engineering for qualified alternatives if discontinuation occurs.