QPD0030

Overview

The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT RF power transistor. It operates from DC to 5 GHz on a 48 V supply rail. The device features a 20-QFN package measuring 3x4 mm. Key electrical specifications include a gain of 15.5 dB and a test voltage of 48 V.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN on SiC) HEMT technology for high power performance
• Operates across a wide frequency range from DC to 5 GHz
• Designed as an unmatched discrete component for flexible integration

Applications

• Base station power amplification
• Broadband RF signal generation
• Test and measurement equipment

Procurement Notes

Verify the specific datasheet revision, as Qorvo documents may be subject to change without notice. Confirm that the application circuitry supports the required 48 V supply rail and thermal management for a 45 W output device. Ensure the design accommodates the 20-QFN package dimensions and mounting requirements.

Selection Notes

Select this component when a high-power, broadband solution is required up to 5 GHz. The unmatched nature allows designers to implement custom matching networks for specific impedance requirements. Consider the thermal dissipation capabilities inherent to the GaN on SiC substrate and the 20-QFN form factor.

Part Context

This part belongs to Qorvo's portfolio of GaN RF power transistors. It is categorized under RF FETs and MOSFETs. The device is distinct from lower-power or matched amplifier modules, serving as a discrete active element for high-power RF chains.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.