QPD0050TR7

Overview

The QPD0050TR7 is a Gallium Nitride (GaN) field-effect transistor manufactured by Qorvo. It operates from DC to 3.6 GHz and delivers 75 W of output power at 48 V. The device features a single configuration with 19.4 dB gain. It utilizes an SMD/SMT installation style in a DFN-6 package. Operating temperatures range from -40 °C to unspecified maximums, with humidity sensitivity confirmed.

Feature Summary

• High-power GaN technology for efficient RF amplification
• Wideband operation covering DC to 3.6 GHz
• Integrated input matching for simplified design

Applications

• Base station power amplification
• Broadband RF signal generation
• Test and measurement equipment

Procurement Notes

Verify component authenticity through authorized Qorvo distributors or certified suppliers. Confirm the specific revision level matches design requirements. Check for moisture sensitivity packaging integrity prior to soldering. Ensure ESD protection protocols are followed during handling and assembly processes.

Selection Notes

Select this component for high-power applications requiring wide bandwidth up to 3.6 GHz. Evaluate thermal management capabilities due to 75 W output. Compare against alternative GaN devices if lower voltage or different package constraints exist. Verify compatibility with 48 V supply rails.

Part Context

This part belongs to Qorvo's GaN FET portfolio designed for demanding RF environments. It complements other broadband amplifiers in the lineup. The TR7 suffix indicates tape and reel packaging for automated assembly. It serves as a discrete solution for high-efficiency power conversion.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Qorvo engineering for qualified alternatives if discontinuation occurs.