QPD1008L

$308.57

Description：RF TRANSISTOR 125W 50V NI-360
Series：*

SKU:8331b42440d1 Category: RF FETs, MOSFETs Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：RF TRANSISTOR 125W 50V NI-360
Series：*
Mfr：Qorvo
Package：Bulk
Technology：-
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QPD1008L

Overview

The QPD1008L is a wideband unmatched discrete GaN-on-SiC HEMT RF transistor designed for high-power applications. It operates from DC to 3.2 GHz with a 50V supply rail. The device delivers a P3dB output power of 125 W and provides 17.5 dB of linear gain. Typical Power Added Efficiency (PAE) at 3dB compression is 72%. The component supports both CW and pulse operation modes.

Feature Summary

High-power capability with 125W output at P3dB
Wideband frequency coverage from DC to 3.2 GHz
High efficiency performance with 72% typical PAE
Robust construction supporting CW and pulse modes

Applications

Broadband power amplifier design
Military radar systems
Electronic warfare equipment
Test and measurement instrumentation

Procurement Notes

Verify the specific revision status of the datasheet, as specifications may be subject to change without notice. Confirm that the procurement includes the necessary evaluation boards, such as the QPD1008LPCB4B01 or QPD1008LEVB3, for proper characterization. Ensure compatibility with 50V supply requirements and thermal management solutions suitable for high-power GaN devices before finalizing orders.

Selection Notes

Select this component when designing amplifiers requiring high linearity and broad bandwidth up to 3.2 GHz. The unmatched nature requires external matching networks. Consider the 50V operating voltage and thermal resistance characteristics for PCB layout. This device is suitable for applications demanding high output power density and efficient energy conversion in rugged environments.

Part Context

The QPD1008L belongs to Qorvo's QPD series of GaN RF transistors. These components are engineered for demanding RF applications where high power and reliability are critical. The series utilizes Gallium Nitride on Silicon Carbide technology to achieve superior performance compared to traditional silicon-based alternatives in high-frequency power applications.