QPD1013SR

Overview

The Qorvo QPD1013SR is a discrete Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT). It operates from DC to 2.7 GHz and delivers 150 W of output power at the P3dB compression point. The device features a Drain-Source Voltage of 65 V and achieves a Power Added Efficiency (PAE) of 64.8%. Packaged in a DFN-6 surface-mount format, it functions as a single-stage unmatched power amplifier transistor.

Feature Summary

• Utilizes GaN-on-SiC HEMT technology for high-power RF performance
• Designed as a single-stage unmatched power amplifier transistor
• Supports wideband operation from DC up to 2.7 GHz

Applications

• Base station power amplification
• Point-to-point microwave radio links
• Military radar systems

Procurement Notes

Verify the specific datasheet version against the manufacturer's official records to confirm current electrical tolerances and thermal characteristics. Ensure that the DFN-6 package handling requirements are strictly followed during assembly to maintain device integrity and performance reliability.

Selection Notes

Select this component when designing high-efficiency power amplifier stages requiring significant output power within the sub-3 GHz frequency range. The unmatched topology simplifies matching network design, while the robust GaN construction supports high voltage and thermal stress conditions typical in infrastructure applications.

Part Context

This part belongs to Qorvo’s portfolio of discrete GaN FETs, leveraging advanced semiconductor processes for high linearity and efficiency. It serves as a core active element in RF power chains, distinct from integrated MMIC solutions by offering standalone flexibility for custom impedance matching and thermal management strategies.

Replacement Considerations

No public confirmed substitute part numbers are available.