QPD1016

Overview

The QPD1016 is a 500W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (GaN HEMT). It operates within a frequency range of 420MHz to 450MHz. At 1.3GHz, the device provides 18dB linear gain and achieves 67% drain efficiency at 3dB compression. The component supports both pulse and linear operation modes.

Feature Summary

• Pre-matched input impedance for simplified circuit integration
• Discrete GaN on SiC HEMT technology for high power density
• Supports linear and pulsed operational modes

Applications

• RF development and evaluation using dedicated boards like QPD1016LEVB01
• High-power RF amplifier prototyping
• Military and aerospace radar systems

Procurement Notes

Verify the specific suffix against official Qorvo documentation to confirm exact electrical characteristics and package type. Ensure compatibility with NI-780 cavity packages during sourcing. Confirm RoHS compliance status through manufacturer datasheets prior to procurement.

Selection Notes

Select this component for applications requiring high output power in the VHF/UHF bands. Evaluate thermal management requirements due to high power dissipation. Verify that the operating frequency falls within the specified 420MHz to 450MHz range for optimal performance metrics.

Part Context

This part belongs to Qorvo's high-power GaN transistor portfolio. It is designed for robust performance in demanding RF environments. The device utilizes advanced semiconductor materials to deliver superior power handling compared to traditional silicon-based alternatives.

Replacement Considerations

Consult Qorvo official substitution guides for verified equivalents. Generic replacements may not match the pre-matching network or thermal specifications.