QPD1022TR7

QPD1022TR7

$19.51
  • Description:DC-12 GHZ, 10W, 32V GAN RF TR
  • Series:-

SKU:a280312f2a54 Category: Brand:

  
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Product Detailed Parameters

  • Description:DC-12 GHZ, 10W, 32V GAN RF TR
  • Series:-
  • Mfr:Qorvo
  • Package:Tape & Reel (TR)
  • Technology:-
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QPD1022TR7

Overview

The QPD1022TR7 is a Gallium Nitride (GaN) field-effect transistor manufactured by Qorvo, designed for high-power radio frequency applications. It operates across a frequency range from DC to 12 GHz. The device delivers an output power of 10 W at the P3dB compression point and achieves a linear gain of 24.0 dB. Typical Power Added Efficiency (PAE) at P3dB is 68.8%. The component requires an operating voltage of 32 V and features a drain-source breakdown voltage of 100 V with a continuous drain current of 610 mA. It is housed in a QFN-16 surface-mount package and supports a power dissipation of 17.5 W.

Feature Summary

  • Utilizes GaN-on-SiC technology for enhanced RF performance
  • Supports wideband operation from DC to 12 GHz
  • Provides high output power capability suitable for power amplifier stages

Applications

  • RF power amplification in communication systems
  • Broadband signal processing circuits
  • Military and aerospace radar transmitters

Procurement Notes

Verify the specific ordering suffix against official Qorvo documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with the manufacturer's standard factory pack size. Check regional availability status as distribution channels may vary. Ensure compliance with RoHS requirements if applicable to the target market. Validate that the ESD protection measures during handling meet industry standards for sensitive semiconductor devices.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency in the microwave frequency range. Consider the 32 V operating voltage requirement for bias network design. Evaluate thermal management needs based on the 17.5 W power dissipation rating. Compare the 10 W output power against system link budget requirements. Assess the QFN-16 package footprint for PCB layout constraints.

Part Context

This part belongs to the QPD series of GaN FETs from Qorvo, which are engineered for robust RF performance. The TR7 suffix typically indicates reel packaging for automated assembly. It complements other Qorvo RF components like switches and filters in complete transmitter chains. The series emphasizes reliability and high power density for demanding wireless infrastructure applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Qorvo engineering for potential cross-reference options or updated revisions within the same product family.

QPD1022TR7QPD1022TR7
$19.51
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