QPD1025

$1,238.00

Description：.96-1.215GHZ 1800W,65V,GAN RF IN
Series：-

SKU:30f523824c74 Category: RF FETs, MOSFETs Brand: Qorvo

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Product introduction

Product Detailed Parameters

Description：.96-1.215GHZ 1800W,65V,GAN RF IN
Series：-
Mfr：Qorvo
Package：Tray
Technology：HEMT
Frequency：-
Gain：19dB
Voltage - Test：65 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.5 A
Power - Output：1862W
Voltage - Rated：70 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：NI-1230
Supplier Device Package：NI-1230
Configuration：N-Channel

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QPD1025

Overview

The QPD1025 is a Gallium Nitride (GaN) radio frequency power transistor manufactured by Qorvo. It operates within the 1.0 GHz to 1.1 GHz frequency range and is designed for high-power applications requiring a drain voltage of 65 V. The device utilizes GaN technology to deliver significant RF output power, making it suitable for demanding communication systems. Evaluation boards such as the QPD1025EVB are available to facilitate characterization and integration into circuit designs.

Feature Summary

Utilizes Gallium Nitride (GaN) technology for enhanced performance
Designed for operation at 65 V drain bias
Optimized for the 1.0 GHz to 1.1 GHz frequency band

Applications

Base station power amplification
Military radar systems
High-power communication transmitters

Part Context

The QPD1025 belongs to Qorvo's portfolio of GaN RF power transistors. It is distinct from other models in the series, such as the QPD1016 or QPD1020, by its specific frequency coverage and voltage requirements. The component is typically evaluated using dedicated hardware like the QPD1025EVB to verify electrical characteristics before final implementation.